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SSDF9510 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSDF9510 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 7 page  SSDF9510 13A, 100V, RDS(ON) 110mΩ Ω Ω Ω -13A, -100V, RDS(ON) 210mΩ Ω Ω Ω N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 14-Nov-2012 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Drain-Source Breakdown Voltage N-Ch BVDSS 100 - - V VGS=0, ID=250µA P-Ch -100 - - VGS=0, ID= -250µA Gate-Threshold Voltage N-Ch VGS(th) 1 - 2.5 V VDS=VGS, ID=250µA P-Ch -1 - -2.5 VDS=VGS, ID= -250µA Gate-Source Leakage Current N-Ch IGSS - - ±100 nA VGS= ±20V P-Ch - - ±100 Drain-Source Leakage Current N-Ch IDSS - - 1 µA VDS=80V, VGS=0, TJ=25°C P-Ch - - -1 VDS= -80V, VGS=0, TJ=25°C N-Ch - - 5 VDS=80V, VGS=0, TJ=55°C P-Ch - - -5 VDS= -80V, VGS=0 , TJ=55°C Drain-Source On-Resistance 2 N-Ch RDS(ON) - - 110 m VGS=10V, ID=8A P-Ch - - 210 VGS= -10V, ID= -8A N-Ch - - 120 VGS=4.5V, ID=6A P-Ch - - 250 VGS= -4.5V, ID= -6A Total Gate Charge N-Ch Qg - 26.2 - nC N-Channel VDS=80V, VGS=10V, ID=10A P-Channel VDS= -80V, VGS= -4.5V, ID= -8A P-Ch - 16 - Gate-Source Charge N-Ch Qgs - 4.6 - P-Ch - 4.4 - Gate-Drain (“Miller”) Charge N-Ch Qgd - 5.1 - P-Ch - 8.7 - Turn-on Delay Time N-Ch Td(on) - 4.2 - nS N-Channel VDS=50V, RG=3.3 ,RL=5 VGS=10V, ID=10A P-Channel VDS= -50V, RG=3.3 , RD=6.25 VGS= -10V, ID= -8A P-Ch - 9 - Rise Time N-Ch Tr - 8.2 - P-Ch - 45 - Turn-off Delay Time N-Ch Td(off) - 35.6 - P-Ch - 40 - Fall Time N-Ch Tf - 9.6 - P-Ch - 4.6 - Input Capacitance N-Ch Ciss - 1535 - pF N-Channel VGS=0, VDS=15V, f=1.0MHz P-Channel VGS=0, VDS= -15V, f=1.0MHz P-Ch - 1590 - Output Capacitance N-Ch Coss - 60 - P-Ch - 110 - Reverse Transfer Capacitance N-Ch Crss - 37 - P-Ch - 70 - Gate Resistance N-Ch Rg - 2 4 VDS=VGS=0, f=1.0MHz P-Ch - 8 12 |
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