SSDF9510

Ω

Ω

Ω

Ω

Ω

Ω

N And P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

14-Nov-2012 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Guaranteed Avalanche Chatacteristics

Single Pulse Avalanche Energy

10

-

-

mJ

P-Ch

10

-

-

Source-Drain Diode

Forward On Voltage

2

N-Ch

-

-

1.2

V

P-Ch

-

-

-1.2

Continuous Source Current

1,6

N-Ch

-

-

13

A

P-Ch

-

-

-13

Pulsed Source Current

2,6

N-Ch

-

-

48

A

P-Ch

-

-

-48

Notes:

1

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

Pulse width≦300µs, duty cycle≦2%.

4 .The power dissipation is limited by 150 °C junct ion temperature

5 The Min. value is 100% EAS tested guarantee.