SSG4530C

Ω

Ω

Ω

Ω

Ω

Ω

N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

30-Jul-2012 Rev. A

Page 1 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide low

dissipation.

FEATURES

extends battery life.

Low thermal impedance copper leadframe

SOP-8 saves board space

Fast switching speed

High performance trench technology

APPLICATION

DC-DC converters and power management in

portable and battery-powered products such as computers,.

printers, PCMCIA cards, cellular and cordless telephones

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

Parameter

Symbol

Rating

Unit

N-CH

P-CH

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

1

5.3

-5.2

A

4.2

-4.1

A

Pulsed Drain Current

2

20

-20

A

Continuous Source Current (Diode Conduction)

1

1.3

-1.3

A

Total Power Dissipation

1

2.1

W

1.3

W

Operating Junction & Storage Temperature Range

-55 ~ 150

°C

Thermal Resistance Ratings

Maximum Junction-to-Ambient

1

t≦10 sec

62.5

°C / W

Steady State

110

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.8

6.20

H

0.35

0.51

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.50

0.93

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8

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