SSG4530C

Ω

Ω

Ω

Ω

Ω

Ω

N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

30-Jul-2012 Rev. A

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

N

1.2

1.7

2.5

V

P

-1.2

-1.8

-2.5

Gate-Body Leakage

N

-

±80

±100

nA

P

-

±80

±100

Zero Gate Voltage Drain Current

N

-

0.8

1

µA

P

-

-0.8

-1

On-State Drain Current

1

N

20

24

-

A

P

-20

-24

-

Drain-Source On-Resistance

1

N

-

43

50

m

-

70

82

P

-

45

52

-

72

80

Diode Forward Voltage

N

-

0.75

-

V

P

-

-0.88

-

Dynamic

2

Total Gate Charge

N

-

2.2

-

nC

N-Channel

P-Channel

P

-

10

-

Gate-Source Charge

N

-

0.5

-

P

-

2.2

-

Gate-Drain Charge

N

-

0.8

-

P

-

1.7

-

Turn-On Delay Time

N

-

8

-

nS

N-Channel

P-Channel

P

-

10

-

Rise Time

N

-

5

-

P

-

2.8

-

Turn-Off Delay Time

N

-

23

-

P

-

53.6

-

Fall Time

N

-

3

-

P

-

46

-

Notes:

1.

Pulse test：PW

300µs duty cycle

≦

≦2%.

2.

Guaranteed by design, not subject to production testing.