SSI2154

800mA, 20V

Dual N-Channel MOSFET

Elektronische Bauelemente

18-Oct-2012 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTIONS

The SSI2154 is N-Channel enhancement MOS Field

Effect Transistor. Uses advanced trench technology and

design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load

switch and level shift.

MECHANICAL DATA

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

APPLICATION

DC-DC converter circuit

Load Switch

DEVICE MARKING:

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-563

3K

7’ inch

Parameter

Symbol

Rating

Unit

10S

Steady State

Drain – Source Voltage

20

V

Gate – Source Voltage

±6

V

Continuous Drain Current

1

0.88

0.8

A

0.71

0.64

Power Dissipation

1

0.37

0.3

W

0.23

0.19

Continuous Drain Current

2

0.76

0.69

A

0.6

0.55

Power Dissipation

2

0.27

0.22

W

0.17

0.14

Pulsed Drain Current

3

1.4

A

Maximum Junction-to-Lead

260

°C / W

Operating Junction & Storage Temperature Range

-55~150

°C

SOT-563

54

E

F

J

B

C

D

G

A

H

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.50

1.70

F

0.09

0.16

B

1.50

1.70

G

0.45

0.55

C

0.525

0.60

H

0.17

0.27

D

1.10

1.30

J

0.10

0.30

E

-

0.05