SSI2154

800mA, 20V

Dual N-Channel MOSFET

Elektronische Bauelemente

18-Oct-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

THERMAL RESISTANCE RATINGS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%

4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Source Leakage

-

-

±5

µA

Gate-Threshold Voltage

0.45

0.58

0.85

V

Drain-Source On Resistance

-

220

310

m

-

260

360

-

320

460

Forward Transconductance

-

2

-

S

Body-Drain Diode Ratings

Diode Forward On–Voltage

0.5

0.7

1.5

V

Dynamic Characteristics

Input Capacitance

-

60

-

pF

f=100KHz

Output Capacitance

-

11

-

Reverse Transfer Capacitance

-

7.5

-

Total Gate Charge

-

1.15

-

nC

Threshold Gate Charge

-

0.06

-

Gate-to-Source Charge

-

0.15

-

Gate-to-Drain Charge

-

0.23

-

Turn-on Delay Time

-

22

-

nS

Rise Time

-

80

-

Turn-off Delay Time

-

700

-

Fall Time

-

380

-

Parameter

Symbol

Rating

Unit

Typ.

Max.

Single Operation

Junction-to-Ambient Thermal Resistance

1

T≦10S

285

335

°C / W

Steady State

340

405

Junction-to-Ambient Thermal Resistance

2

T≦10S

385

450

Steady State

455

545

Junction-to-Case Thermal Resistance

Steady State

260

300

Dual Operation

Junction-to-Ambient Thermal Resistance

1

T≦10S

315

365

°C / W

Steady State

370

440

Junction-to-Ambient Thermal Resistance

2

T≦10S

420

490

Steady State

505

585

Junction-to-Case Thermal Resistance

Steady State

265

305