• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

GaAs SPDT Switch

DC - 3.0 GHz

Rev. V4

MASW2000

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• Low Insertion Loss: 0.5 dB Typical @ 2 GHz

• Fast Switching Speed: 22 ns Typical

• Reflective/Absorptive Configuration

• Ultra Low DC Power Consumption

Description

M/A-COM’s MASW2000 is a use-configuratble, high

isolation SPDT switch. It can be absorptive or re-

flective based on user requirements

M/A-COM’s mature 1-micron MESFET process, this

parts is ideal for modules or other packaging for use

in

the

Cellular,

GPS,

LAN

and

infrastructure

markets.

Ordering Information

1

Part Number

Package

MASW2000

Die

1. Die quantity varies.

Bond Pad Dimensions

Bond Pad

Dimension Inches (mm)

RF

0.004 x 0.004 (0.100 x 0.100)

RF1, RF2

0.009 x 0.009 (0.225 x 0.225)

A1, A2, B1, B2

0.004 x 0.004 (0.100 x 0.100)

GND1, GND2

0.009 x 0.004 (0.225 x 0.105)

RL1, RL2

0.004 x 0.005 (0.100 x 0.125)

DIE Size

0.056 x 0.056 x 0.010 (1.40 x 1.40 x 0.25)

Schematic

RL1

RF1

RF

A1 B1

B2 A2

RF2

RL2

Absolute Maximum Ratings

2

Parameter

Absolute Maximum

Control Voltage

(A1/B2 or A2/B1)

-8.5 VDC

Input RF Power

+34 dBm

Operating Temperature

+175°C

Storage Temperature

-65°C to +175°C

2. Exceeding any one or combination of these limits may cause

Pad Layout

A1

B2

RF

B1

A2

RL1

RL2

GND

GND

RF1

RF2