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IXTP2N100P 数据表(PDF) 4 Page - IXYS Corporation |
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IXTP2N100P 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTA2N100P IXTP2N100P IXTY2N100P IXYS REF: T_2N100P (2C) 04-03-08-A Fig. 7. Input Admittance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0246 8 10 12 14 16 18 20 22 24 26 QG - NanoCoulombs VDS = 500V I D = 1A I G = 10mA Fig. 11. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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