IXTP2N100P datasheet(1/4 Pages) IXYS

部件名	IXTP2N100P

功能描述	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

2.0

A

I

DM

T

C = 25°C, pulse width limited by TJM

5.0

A

I

A

T

C = 25°C

2.0

A

E

AS

T

C = 25°C

150

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C86

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.50

g

TO-220

3.00

g

TO-252

0.35

g

DS99817B(04/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 100μA

2.5

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±50 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

6.0

7.5

Ω

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA2N100P

IXTP2N100P

IXTY2N100P

V

DSS

= 1000V

I

D25

= 2.0A

R

DS(on) ≤

≤≤≤≤ 7.5Ω

Ω

G = Gate

D = Drain

S = Source

TAB = Drain

Features

International standard packages

Unclamped Inductive Switching

(UIS) rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-263 (I

XTA)

TO-220 (I

XTP)

D

(TAB)

G

S

G

S

(TAB)

G

S

(TAB)

TO-252 (IXTY)

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor controls

Robotics and servo controls

类似零件编号 - IXTP2N100P

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	IXTP2N100P	294Kb / 2P	isc N-Channel MOSFET Transistor

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