IO20PDB0V0 datasheet(64/197 Pages) MICROSEMI

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SmartFusion DC and Switching Characteristics

2- 52

R e v i sio n 1 2

Timing Characteristics

Figure 2-20 • Input DDR Timing Diagram

tDDRICLR2Q2

tDDRIREMCLR

tDDRIRECCLR

tDDRICLR2Q1

CLK

Data

CLR

Out_QR

Out_QF

tDDRICLKQ1

tDDRIHD

tDDRISUD

tDDRICLKQ2

Table 2-75 • Input DDR Propagation Delays

Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V

Parameter

Description

–1

Units

tDDRICLKQ1

Clock-to-Out Out_QR for Input DDR

0.39

tDDRICLKQ2

Clock-to-Out Out_QF for Input DDR

0.28

tDDRISUD

Data Setup for Input DDR

0.29

tDDRIHD

Data Hold for Input DDR

0.00

tDDRICLR2Q1

Asynchronous Clear-to-Out Out_QR for Input DDR

0.58

tDDRICLR2Q2

Asynchronous Clear-to-Out Out_QF for Input DDR

0.47

tDDRIREMCLR

Asynchronous Clear Removal time for Input DDR

0.00

tDDRIRECCLR

Asynchronous Clear Recovery time for Input DDR

0.23

tDDRIWCLR

Asynchronous Clear Minimum Pulse Width for Input DDR

0.22

tDDRICKMPWH

Clock Minimum Pulse Width High for Input DDR

0.36

tDDRICKMPWL

Clock Minimum Pulse Width Low for Input DDR

0.32

FDDRIMAX

Maximum Frequency for Input DDR

350

MHz

Note:

For derating values at specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for

derating values.

IO20PDB0V0 数据表(PDF) 64 Page - Microsemi Corporation

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