V20

Silicon PIN Chips

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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7

Die Handling and Bonding Information

Handling: All semiconductor chips should be handled with care to avoid damage or contamination

from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is

strongly recommended for the handling and placing of individual components. Bulk handling should

ensure that abrasion and mechanical shock are minimized.

Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS

compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane

mounting surface must be free of contamination and should have a surface flatness of < ±0.002”.

recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be

than 10 seconds.

Eutectic Die Attachment Using Reflow Oven: For recommended reflow profile refer to pages 5-7

Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive,

silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal

resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to

ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for

1 hour.

Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a

final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either

temperature of 150°C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be

used but should be adjusted to the minimum amplitude required to achieve an acceptable bond.

Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or

wedge bonding may also be used.

and Handling Procedures for Chip Diode Devices”.