V20

Silicon PIN Chips

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Features

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Switch & Attenuator Die

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Extensive Selection of I-Region Lengths

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Hermetic

♦

♦

Oxide Passivated Planar Chips

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Voltage Ratings to 3000V

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Fast Switching Speed

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Low Loss

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High Isolation

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RoHS Compliant

Description

M/A-COM Technology Solutions offers a comprehensive

line of low capacitance, planar and mesa, silicon PIN

diode chips which use ceramic glass and silicon nitride

passivation technology. The Silicon PIN Chip series of

devices cover a broad spectrum of performance

requirements for control circuit applications. They are

available in several choices of I-region lengths and have

been optimally designed to minimize parametric trade offs

when considering low capacitance, low series resistance,

and high breakdown voltages. Their small size and low

parasitics, make them an ideal choice for broadband, high

frequency, micro-strip hybrid assemblies.

The attenuator line of PIN diode chips are a planar or

mesa construction and because of their thicker I-regions

suited for low distortion attenuator and switch circuits.

Incorporated in the chip’s construction is M/A-COM

hard glass passivation completely encapsulates the entire

PIN junction area resulting in a hermetically sealed chip

which has been qualified in many military applications.

range of voltages, up to 3,000 volts, which are capable of

controlling kilowatts of RF power.

Many of M/A-COM Tech’s silicon PIN diode chips are also

available in several different package styles. Please refer to

the “Packaged PIN Diode Datasheet” for case style availability

and electrical specifications located on the M/A-COM Tech

website at :

macomtech.com/datasheets/packagedpindiodes

and for high voltage, high power devices at :

macomtech.com/datasheets/MA4PK2000_3000_Series

Parameter

Absolute Maximum

Per Specification Table

Power Dissipation (W)

Theta

Operating Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

Junction Temperature

+175°C

Mounting Temperature

+320°C for 10 seconds

1. Exceeding these limits may cause permanent damage

to the chip

Anode

Full Area Cathode