IXTY1R4N60P datasheet(1/4 Pages) IXYS

部件名	IXTY1R4N60P

功能描述	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C

600

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

600

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C

1.4

A

I

DM

T

C = 25° C, pulse width limited by TJM

2.1

A

I

AR

T

C = 25° C

1.4

A

E

AR

T

C = 25° C5

mJ

E

AS

T

C = 25° C75

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 20 Ω

P

D

T

C = 25° C50

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062) from case for 10 s

300

° C

T

SOLD

Plastic body for 10 s

260

° C

Weight

TO-220

4.0

g

TO-252

0.35

g

TO-251

0.4

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99253E(10/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 25 µA

600

V

GS(th)

V

DS = VGS, ID = 25 µA

3.0

5.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±50

nA

I

DSS

V

DS = VDSS

1

µA

V

GS = 0 V

T

J = 125° C20

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

9.0

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXTP 1R4N60P

IXTU 1R4N60P

IXTY 1R4N60P

V

DSS

= 600

V

I

D25

=

1.4

A

R

DS(on) ≤

≤≤≤≤

9.0

Ω

TO-252 (IXTY)

G

S

(TAB)

TO-220 (IXTP)

D

(TAB)

G

S

TO-251 (IXTU)

(TAB)

D

G

S

类似零件编号 - IXTY1R4N60P

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	IXTY1R4N60P	308Kb / 2P	isc N-Channel MOSFET Transistor

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