IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 1R4N60P IXTU 1R4N60P

IXTY 1R4N60P

Fig. 11. Capacitance

1

10

100

1000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

01

2345

Fig. 7. Input Adm ittance

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

44.5

55.5

66.5

7

25

-40

Fig. 8. Transconductance

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

25

125

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0.4

0.5

0.6

0.7

0.8

0.9

1

Fig. 12. Maxim um Transient Therm al

Resistance

0.1

1.0

10.0

0.00001

0.0001

0.001

0.01

0.1

1

Pulse Width - Seconds