ACT412

Rev 1, 30-Oct-13

- 4 -

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Copyright © 2013 Active-Semi, Inc.

Active-Semi Proprietary―For Authorized Recipients and Customers

ActivePSR

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GATE DRIVE

Gate Rise Time

VDD = 10V, CL = 1nF

150

250

ns

Gate Falling Time

VDD = 10V, CL = 1nF

90

ns

Gate Low Level ON-Resistance

10

Ω

Gate High Level ON-Resistance

31

Ω

Gate Leakage Current

GATE = 18V, before VDD

turn-on

1

µA

COMPENSATION

Inside Compensate Resistor

ACT412

0

kΩ

Output Sink Current

15

40

µA

Output Source Current

CE

15

40

µA

Transconductance of Error Amplifier

Gm

71

µA/V

Maximum Output Voltage

3.5

V

Minimum Output Voltage

0.4

V

CS to COMP Gain

2

V/V

Pre-Amp Gain

1

V/V

COMP Leakage Current

COMP = 2.5V

1

µA

OSCILLATOR

Maximum Switching

108

120

132

kHz

Maximum Duty Cycle

65

75

%

Minimum Switching Frequency

1164

Hz

ELECTRICAL CHARACTERISTICS CONT’D

tion)