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ZXMP6A13FQ 数据表(PDF) 2 Page - Diodes Incorporated

部件名 ZXMP6A13FQ
功能描述  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP6A13FQ 数据表(HTML) 2 Page - Diodes Incorporated

  ZXMP6A13FQ Datasheet HTML 1Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 2Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 3Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 4Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 5Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 6Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 7Page - Diodes Incorporated ZXMP6A13FQ Datasheet HTML 8Page - Diodes Incorporated  
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ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
2 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A13FQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = 10V
(Note 7)
TA = +70°C
(Note 7)
(Note 6)
ID
-1.1
-0.8
-0.9
A
Pulsed Drain Current (Note 8)
IDM
-4.0
A
Continuous Source Current (Body Diode) (Note 7)
IS
-1.2
A
Pulsed Source Current (Body Diode) (Note 8)
ISM
-4.0
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation (Note 7)
Linear Derating Factor
PD
806
6.5
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
200
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
155
°C/W
Thermal Resistance, Junction to Leads (Note 9)
RθJL
194
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).



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