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ZXMP6A13FQ 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZXMP6A13FQ
功能描述  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP6A13FQ 数据表(HTML) 4 Page - Diodes Incorporated

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ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A13FQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
μA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 10)
RDS (ON)
0.4
Ω
VGS = -10V, ID = -0.9A
0.6
VGS = -4.5V, ID = -0.8A
Forward Transconductance (Notes 10 and 12)
gfs
1.8
S
VDS = -15V, ID = -0.9A
Diode Forward Voltage (Note 10)
VSD
-0.85
-0.95
V
TJ = +25°C, IS = -0.8A, VGS = 0V
Reverse Recovery Time (Note 12)
trr
21.1
ns
TJ = +25°C, IF = -0.9A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 12)
Qrr
19.3
nC
DYNAMIC CHARACTERISTICS
(Note 12)
Input Capacitance
Ciss
219
pF
VDS = -30V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
25.7
Reverse Transfer Capacitance
Crss
20.5
Turn-On Delay Time (Note 11)
tD(on)
1.6
ns
VDD = -30V, ID = -1A,
RG  6.0Ω VGS = -10V
Turn-On Rise Time (Note 11)
tr
2.2
Turn-Off Delay Time (Note 11)
tD(off)
11.2
Turn-Off Fall Time (Note 11)
tf
5.7
Total Gate Charge (Note 11)
Qg
2.9
nC
VDS = -30V, VGS = -4.5V,
ID = -0.9A
Total Gate Charge (Note 11)
Qg
5.9
nC
VDS = -30V, VGS = -10V,
ID = -0.9A
Gate-Source Charge (Note 11)
Qgs
0.74
Gate-Drain Charge (Note 11)
Qgd
1.5
Notes:
10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing



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