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L6393DTR 数据表(PDF) 1 Page - STMicroelectronics |
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L6393DTR 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 19 page ![]() August 2010 Doc ID 14497 Rev 4 1/19 19 L6393 Half-bridge gate driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink ■ Switching times 75/35 nsec rise/fall with 1 nF load ■ 3.3 V, 5 V CMOS/TTL inputs comparators with hysteresis ■ Integrated bootstrap diode ■ Uncommitted comparator ■ Adjustable dead-time ■ Compact and simplified layout ■ Bill of material reduction ■ Flexible, easy and fast design Application ■ Motor driver for home appliances ■ Factory automation ■ Industrial drives and fans ■ HID ballasts ■ Power supply units Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc. Table 1. Device summary Order codes Package Packaging L6393N DIP-14 Tube L6393D SO-14 L6393DTR Tape and reel www.st.com |
类似零件编号 - L6393DTR |
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类似说明 - L6393DTR |
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