December 2010

Doc ID 16369 Rev 6

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LET9150

RF power transistor from the LdmoST family

of n-channel enhancement-mode lateral MOSFETs

Features

Description

The LET9150 is a common source n-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to 2

GHz.

Figure 1.

Pin connection

M246

Epoxy sealed

1-2 Drain

4-5 Gate

3 Source

12

4

5

Table 1.

Device summary

Order code

Package

Branding

LET9150

M246

LET9150

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