LET9150 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	LET9150

功能描述	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

LET9150

4/12

Doc ID 16369 Rev 6

Electrical characteristics

TCASE = +25

2.1

Static

2.2

Dynamic

Table 4.

Static (per section)

Symbol

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

VGS = 0 V

IDS = 1 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 5 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 600 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.7

0.9

GFS

VDS = 10 V

ID = 3 A

2.5

mho

CISS

VGS = 0 V

VDS = 32 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 32 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 32 V

f = 1 MHz

0.65

Table 5.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

POUT

VDD = 32 V IDQ = 600 mA f = 860 MHz

PIN = 2.5 W

150

175

GPS

VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz

ηD

VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz

RTL

VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz

Load

Mismatch

VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz

all phase angles

20:1

VSWR

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