Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFRC9130S.5B

Symbol

Min

Typ Max

Units

Drain to Source Breakdown Voltage

-100

––

––

V

Drain to Source Breakdown Voltage

Temperature Coefficient

––

-0.1

––

Drain to Source On State Resistance

––

––

240

300

300

––

m

Ω

Gate Threshold Voltage

-2.0

––

-4.0

V

Gate to Source Leakage

––

5

±100

nA

Zero Gate Voltage Drain Current

––

––

0.01

1

10

100

µA

µA

Forward Transconductance

4

5.2

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

––

––

––

30

5.5

1.5

38

––

––

nC

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

––

––

––

––

15

25

45

25

35

55

100

60

nsec

Diode Forward Voltage

––

2.00

4.00

V

Diode Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

––

120

0.55

350

2.5

nsec

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

f = 1 MHz

––

––

––

800

160

60

1035

240

90

pF

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FR0016A

DOC