Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Technology

PS-Hard Radiation Hardened MOSFETs

SFRC9130

__ B__

│

│

│

│

│

TX = TX Level

TXV = TXV Level

S = S Level

└ Package:

S.5 = SMD.5

SFRC9130S.5B

10 AMP /100 Volts

300 m

Ω

Radiation Tolerant

P-Channel MOSFET

Features:

•

Advanced POWERShield

•

TID 100K Rad

•

Excellent high temperature stability

•

Hermetically Sealed Power Package

•

Low Total Gate Charge

•

Fast Switching

•

Replacement for IRHNJ9130 and F9130 types

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

-100

V

Gate – Source Voltage

±20

V

Max. Continuous Drain Current (package limited)

10

7

A

Max. Avalanche current

@ L= 5.0 mH

9.8

A

Repetitive Avalanche Energy

@ L= 5.0 mH

5.2

mJ

Single Pulse Avalanche Energy

@ L= 5.0 mH

320

mJ

Total Power Dissipation

75

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

1.65

ºC/W

PACKAGE OUTLINE:

SMD.5

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FR0016A

DOC

.145

.115

.304

.288

.408

.392

.304

.288

3x .020

.010

.030 MIN

.128

.112

.233

.217

2x .010

MAX

2x .103

.087

.030 MIN