| 数据搜索系统,热门电子元器件搜索 |
|
PM8803 数据表(PDF) 29 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
PM8803 数据表(HTML) 29 Page - STMicroelectronics |
|
29 / 34 page ![]() PM8803 Auxiliary sources Doc ID 018559 Rev 2 29/34 6 Auxiliary sources The majority of Powered Devices is designed to work with power from either a PoE network or auxiliary sources. Even though having both sources simultaneously connected is not the normal operating case, the presence of an auxiliary supply allows PDs to be used also when the PoE is not available or not sufficient. Different alternatives are available for connecting auxiliary sources to the PoE section of a PD device. Auxiliary sources can be connected prior to the hot-swap MOSFET, after the hot- swap MOSFET or even at the output of the DC/DC converter. All the above-mentioned methods are available with the PM8803. Both Figure 1 and Figure 2 show simplified application schematics where auxiliary sources can be connected either Prior (Front) or After (Rear) the internal hot-swap MOSFET (VDD and RTN) making use of a resistor divider between the external source and respectively SP or SA pins. Connection of the wall adapter prior to the internal hot-swap MOSFET has a limitation on the voltage of the adapter itself, since it is seen as an alternative of the PoE line and the embedded DC/DC section would be activated only when its value is above the UVLO_R threshold. If the voltage on the SP pin is above 1.1 V, the internal UVLO threshold is bypassed and the PM8803 operates with voltage as low as 15 V typical. The current flowing into the hot-swap MOSFET will be limited by a dual threshold: typically140 mA during the inrush phase, and a user programmable value (DCCL pin) for the rest of the phases. Priority of one source over another cannot be guaranteed by design, since it depends on timings of insertion and the value of the PoE line with respect to the auxiliary. If, for example, the PoE connection is already established, the auxiliary source cannot prevail unless its value is higher than that of the PoE after the diode bridge. Please note that with the use of a low-voltage adapter applied before the hot swap frontal connection, the max power drawn could be evaluated as ( Vin - Vd ) x Imax; in case of a 15 V adapter the input power will be limited to about (15 - 0.5) x 1 A = 14.5 W, much lower than the available power from the PoE connection. High-power systems must use high-voltage power adapters, with voltage at 48 V, and rear connections, not to be limited by the internal DC current limitation. Both Figure 1 and Figure 2 show simplified application schematics where auxiliary sources are also connected after the internal hot-swap MOSFET (VDD and RTN). This connection, together with the resistor divider on the SA pin, allows priority of the external source with respect to the PoE. Indeed, if the voltage of this pin is above the value of 1.20 V, the PM8803 will disable its PD interface section and enable the DC/DC section only. The internal hot- swap MOSFET will be opened. Depending on the value of the auxiliary source, the resistor divider must be dimensioned in order to have voltage on the SA and SP pins above their thresholds but still below their maximum operative value of 3.3 V specified in Table 3. Figure 15 depicts a smooth transition between a PoE and a wall adapter whose voltage is 5 V higher than the PoE voltage. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |