BAS85 datasheet(1/2 Pages) GE

部件名	BAS85

功能描述	Schottky Diodes

PDF	2 Pages

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制造商	GE [General Semiconductor]

网页	http://www.vishay.com

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FEATURES

Schottky Diodes

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05 g

Dimensions in inches and (millimeters)

MiniMELF

.142 (3.6)

.019 (0.48)

Cathode Mark

.134 (3.4)

.011 (0.28)

4/98

BAS85

Symbol

Value

Unit

Continuous Reverse Voltage

VR

30

V

Forward Continuous Current at Tamb = 25 °C

IF

2001)

mA

Peak Forward Current at Tamb = 25 °C

IFM

3001)

mA

Surge Forward Current

at tp < 1 s, Tamb = 25 °C

IFSM

6001)

mA

Power Dissipation at Tamb = 65 °C

Ptot

2001)

mW

Junction Temperature

Tj

125

°C

Storage Temperature Range

TS

–55 to +150

°C

1) Valid provided that electrodes are kept at ambient temperature.

For general purpose applications

This diode features low turn-on voltage.

The devices are protected by a PN junc-

tion guard ring against excessive voltage,

such as electrostatic discharges.

This diode is also available in a DO-35 case with type

designation BAT85.

♦

类似零件编号 - BAS85

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS85	25Kb / 5P	Schottky barrier diode 1996 Oct 01
Vishay Siliconix	BAS85	51Kb / 4P	Schottky Barrier Diode 01-Apr-99
Diodes Incorporated	BAS85	47Kb / 1P	SILICON SCHOTTKY BARRIER DIODE DS30189 Rev. A-5
Tak Cheong Electronics ...	BAS85	311Kb / 3P	200 mW LL-34 Hermetically Sealed Glass Fast Switching Schottky Barrier Diode
Galaxy Semi-Conductor H...	BAS85	60Kb / 2P	SMALL SIGNAL SCHOTTKY DIODES

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类似说明 - BAS85

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