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BAS85 数据表(PDF) 2 Page - General Semiconductor |
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BAS85 数据表(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAS85 Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage tested with 10 µA Pulses V(BR)R 30 ––V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA VF VF VF VF VF – – – – – – – – 0.5 – 0.24 0.32 0.4 – 0.8 V V V V V Leakage Current at VR = 25 V IR –0.2 2 µA Capacitance at VR = 1 V, f = 1 MHz Ctot ––10 pF Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA trr ––5ns 1) Valid provided that electrodes are kept at ambient temperature. |
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