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BAS85 数据表(PDF) 2 Page - General Semiconductor

部件名 BAS85
功能描述  Schottky Diodes
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAS85 数据表(HTML) 2 Page - General Semiconductor

  BAS85 Datasheet HTML 1Page - General Semiconductor BAS85 Datasheet HTML 2Page - General Semiconductor  
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BAS85
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 10
µA Pulses
V(BR)R
30
––V
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 1 mA
at IF = 10 mA
at IF = 30 mA
at IF = 100 mA
VF
VF
VF
VF
VF
0.5
0.24
0.32
0.4
0.8
V
V
V
V
V
Leakage Current
at VR = 25 V
IR
–0.2
2
µA
Capacitance
at VR = 1 V, f = 1 MHz
Ctot
––10
pF
Thermal Resistance
Junction to Ambient Air
RthJA
4301)
K/W
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA to IR = 1 mA
trr
––5ns
1) Valid provided that electrodes are kept at ambient temperature.



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