IXTH90P10P datasheet(4/5 Pages) IXYS

4 / 5 page

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXTT90P10P

IXTH90P10P

Fig. 7. Input Admittance

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

-7.5

-7.0

-6.5

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

VGS - Volts

TJ = - 40ºC

25ºC

125ºC

Fig. 8. Transconductance

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-240

-200

-160

-120

-80

-40

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

10203040

5060708090

100

110

120

QG - NanoCoulombs

VDS = - 50V

I D = - 45A

I G = -1mA

Fig. 11. Capacitance

100

1,000

10,000

-40

-35

-30

-25

-20

-15

-10

-5

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

100

1,000

100

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

100µs

RDS(on) Limit

100ms

1ms

10ms

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