IXTH90P10P datasheet(1/5 Pages) IXYS

部件名	IXTH90P10P

功能描述	P-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

-100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

-100

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 90

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 225

A

I

A

T

C = 25°C

- 90

A

E

AS

T

C = 25°C

2.5

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

462

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

6

g

TO-247

4

g

DS99986B(01/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

-100

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.0

- 4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 25

μA

T

J = 125°C

- 200

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

25 m

Ω

PolarPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

V

DSS

= - 100V

I

D25

= - 90A

R

DS(on) ≤

≤≤≤≤

25m

Ω

IXTT90P10P

IXTH90P10P

Features:

International Standard Packages

Avalanche Rated

Fast Intrinsic Diode

Rugged PolarPTM Process

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

D

S

G

类似零件编号 - IXTH90P10P

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