STB46NF30 datasheet(3/19 Pages) STMICROELECTRONICS

部件名	STB46NF30

功能描述	N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 19 page

STB46NF30, STP46NF30, STW46NF30

Electrical ratings

Doc ID 018493 Rev 1

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

300

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

168

Ptot

Total dissipation at TC = 25 °C

300

Derating factor

W/°C

dv/dt (2)

ISD ≤ 34 A, di/dt ≤200 A/µs, VDD ≤ 80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (1)

Pulse width limited by Tjmax

EAS

(2)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V

Single pulse avalanche energy

290

STB46NF30 数据表(PDF) 3 Page - STMicroelectronics

STB46NF30 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表下载

链接网址

STB46NF30 数据表(PDF) 3 Page - STMicroelectronics

STB46NF30 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表 下载

链接网址

数据表下载