STB46NF30 datasheet(4/19 Pages) STMICROELECTRONICS

部件名	STB46NF30

功能描述	N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 19 page

Electrical characteristics

STB46NF30, STP46NF30, STW46NF30

4/19

Doc ID 018493 Rev 1

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS =0

300

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 300 V

VDS = 300 V, TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 17 A

0.063 0.075

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

3200

442

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 150 V, ID = 17 A

RG =4.7 Ω VGS = 10 V

(see Figure 16)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 240 V, ID = 34 A,

VGS = 10 V

(see Figure 17)

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