2SK2008 datasheet(3/6 Pages) HITACHI

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2SK2008

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

(BR)DSS

250

—

D = 10 mA, VGS = 0

Gate to source breakdown

voltage

(BR)GSS

±30

—

G = ±100 µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±25 V, VDS = 0

Zero gate voltage drain current I

DSS

—

250

µAV

DS =200 V, VGS = 0

Gate to source cutoff voltage

GS(off)

2.0

—

3.0

D = 1 mA, VDS = 10 V

Static drain to source on state

resistance

DS(on)

—

0.12

0.15

Ω

D = 10 A

GS = 10 V*

Forward transfer admittance

fs|

9.0

—

D = 10 A

DS = 10 V*

Input capacitance

Ciss

—

2340

—

DS = 10 V

Output capacitance

Coss

—

1000

—

GS = 0

Reverse transfer capacitance

Crss

—

160

—

f = 1 MHz

Turn-on delay time

d(on)

—

D = 10 A

Rise time

—

125

—

GS = 10 V

Turn-off delay time

d(off)

—

190

—

L = 3 Ω

Fall time

—

100

—

Body to drain diode forward

voltage

—

1.2

—

F = 20 A, VGS = 0

Body to drain diode reverse

recovery time

—

120

—

F = 20 A, VGS = 0,

F / dt = 100 A / µs

Note

1. Pulse Test

See chracteristic curves of 2SK2007

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