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2SK2008 数据表(PDF) 4 Page - Hitachi Semiconductor |
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2SK2008 数据表(HTML) 4 Page - Hitachi Semiconductor |
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4 / 6 page ![]() 2SK2008 4 0 30 60 90 50 100 150 Case Temperature Tc (°C) Power vs. Temperature Derating Maximum Safe Operation Area 0.1 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Drain to Source Voltage V (V) DS Ta = 25°C Operation in this area is limited by RDS(on) 3 Pulse Width PW (s) 1.0 0.1 0.3 D = 1 10 µ 0.03 0.01 100 µ 10 m 100 m 1 10 1 m TC = 25°C 0.5 0.2 0.1 0.05 0.02 0.01 1 Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width T PW PDM D = T PW θch–c (t) = γ S (t) · θch–c θch–c = 2.08°C/W, T C = 25°C |
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