BB503C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-812B(Z)

3rd. Edition

Jul. 1999

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.8 dB typ. at f = 900 MHz

• High gain; PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

Notes:

1.

Marking is “CS–”.

2.

BB503C is individual type number of HITACHI BBFET.