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BB503C 数据表(PDF) 2 Page - Hitachi Semiconductor

部件名 BB503C
功能描述  Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
PDF  13 Pages
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制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor

BB503C 数据表(HTML) 2 Page - Hitachi Semiconductor

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BB503C
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6V
Gate1 to source voltage
V
G1S
+6
–0
V
Gate2 to source voltage
V
G2S
+6
–0
V
Drain current
I
D
20
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
——V
I
D = 200µA
V
G1S = VG2S = 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
——V
I
G1 = +10 µA
V
G2S = VDS = 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
——V
I
G2 = +10 µA
V
G1S = VDS = 0
Gate1 to source cutoff current I
G1SS
—
—
+100
nA
V
G1S = +5V
V
G2S = VDS = 0
Gate2 to source cutoff current I
G2SS
—
—
+100
nA
V
G2S = +5V
V
G1S = VDS = 0
Gate1 to source cutoff voltage V
G1S(off)
0.5
0.7
1.0
V
V
DS = 5V, VG2S = 4V
I
D = 100µA
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
V
DS = 5V, VG1S = 5V
I
D = 100µA
Drain current
I
D(op)
7
1013mA
V
DS = 5V, VG1 = 5V
V
G2S = 4V, RG = 47kΩ
Forward transfer admittance
|y
fs|
19
2429mS
V
DS = 5V, VG1 = 5V
V
G2S =4V
R
G = 47kΩ, f = 1kHz
Input capacitance
c
iss
1.4
1.7
2.0
pF
V
DS = 5V, VG1 = 5V
Output capacitance
c
oss
0.7
1.1
1.5
pF
V
G2S =4V, RG = 47kΩ
Reverse transfer capacitance c
rss
—
0.025
0.05
pF
f = 1MHz
Power gain
PG
17
22
—
dB
V
DS = 5V, VG1 = 5V
V
G2S =4V, RG = 47kΩ
Noise figure
NF
—
1.8
2.4
dB
f = 900MHz



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