SW601Q datasheet(1/4 Pages) SEMIPOWER

部件名	SW601Q

功能描述	N-channel SOT-23 MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

网页	http://www.samwinsemi.com

标志

1 / 4 page

May. 2014. Rev. 1.0

SW601Q

Features

■ R

DS(ON) (Max 700Ω)@VGS=0V,ID=3mA

■ High Switching Speed

General Description

The SW601Q is an N-

channel power MOSFET using SAMWIN’s

Advanced technology to provide the customers with high switching

speed.

N-channel SOT-23 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

(Note 2)

600

V

DGX

Drain to Gate Voltage

(Note 2)

600

V

I

D

Continuous Drain Current (@T

C=25

oC)

0.185

A

I

DM

Drain current pulsed

0.740

A

V

GSS

Gate to Source Voltage

± 20

V

P

D

Total power dissipation (@T

C=25

oC)

0.5

W

T

J

Junction Temperature

+ 150

oC

T

STG,

Storage Temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

250

oC/W

1/4

BV

DSS : 600V

I

D

: 0.185A

R

DS(ON) : 700Ω

1. Source 2. Gate 3. Drain

2

3

1

2

3

SOT-23

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW E 601Q

SW601Q

SOT-23

REEL

Order Codes

Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. TJ=+25°C~+150°C

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