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May. 2014. Rev. 1.0

Electrical characteristic ( T

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

600

V

I

D(OFF)

Drain to source leakage current

V

0.1

uA

I

GSS

Gate to source leakage current, forward

V

100

nA

V

-100

nA

Gate to source leakage current, reverse

On characteristics

V

GS(OFF)

Gate to Source Cut Off Voltage

V

-2.7

-1.5

V

I

DSS

Drain to source leakage current

V

7

mA

R

DS(ON)

Drain to source on state resistance

V

330

700

Ω

Dynamic characteristics

C

iss

Input capacitance

V

15

pF

C

oss

Output capacitance

145

C

rss

Reverse transfer capacitance

4

t

d(on)

Turn on delay time

V

R

40

ns

tr

Rising time

20

t

d(off)

Turn off delay time

45

t

f

Fall time

280

Q

g

Total gate charge

V

1300

nC

Q

gs

Gate-source charge

300

Q

gd

Gate-drain charge

45

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

SD

Diode forward voltage drop.

I

1.4

V

Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature.

2. Pulse width≤380μs; duty cycle≤2%.

2/4

SW601Q

SAMWIN