Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2012. Rev. 3.0

3/5

SAMWIN

Fig. 1. On-state characteristics

Fig. 2. On-resistance variation vs.

drain current and gate voltage

Fig. 3. Gate charge characteristics

SW830

0.0

2.0

4.0

6.0

8.0

10.0

12.0

0.0

10.0

20.0

30.0

40.0

Qg, Total Gate Charge (nC)

VDS=400V

Notes:

1. 250μs Pulse Test

2. T=25 ℃

3. VGS 2~10V Step=1V

VGS=20V

VGS=10V

Fig. 4. On state current vs. diode

forward voltage

Fig 5. Breakdown Voltage Variation

vs. Junction Temperature

Fig. 6. On resistance variation

vs. junction temperature

150℃

25℃

0

0.5

1

1.5

2

2.5

-70 -45 -20

5

30

55

80 105 130 155 180

TJ Junction Temperture （℃）

0.8

0.9

1

1.1

1.2

-70 -45 -20

5

30

55

80 105 130 155 180

TJ Junction Temperture （℃）