Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2012. Rev. 3.0

2/5

SAMWIN

Electrical characteristic ( T

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain to source breakdown voltage

500

-

-

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

-

0.48

-

Drain to source leakage current

-

-

1

uA

-

-

10

uA

Gate to source leakage current, forward

-

-

100

nA

Gate to source leakage current, reverse

-

-

-100

nA

On characteristics

Gate threshold voltage

2.0

-

4.0

V

Drain to source on state resistance

-

1.4

1.5

Ω

Forward Transconductance

VDS = 40 V, ID = 2.75 A

3

-

-

S

Dynamic characteristics

Input capacitance

-

-

1100

pF

Output capacitance

-

-

115

Reverse transfer capacitance

-

-

32

Turn on delay time

(note 4,5)

-

12

40

ns

tr

Rising time

-

33

80

Turn off delay time

-

97

200

Fall time

-

48

80

Total gate charge

(note 4,5)

-

30

50

nC

Gate-source charge

-

4

-

Gate-drain charge

-

14

-

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

-

-

5.5

A

Pulsed source current

-

-

22

A

Diode forward voltage drop.

-

-

1.5

V

Reverse recovery time

-

370

-

ns

Breakdown voltage Charge

-

2.8

-

uC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

3.

4.

Pulse Test : Pulse Width

≤ 300us, duty cycle ≤ 2%

5.

Essentially independent of operating temperature.

SW830