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STF28N60M2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF28N60M2
功能描述  N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF28N60M2 数据表(HTML) 5 Page - STMicroelectronics

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DocID025255 Rev 2
5/14
STF28N60M2, STFI28N60M2
Electrical characteristics
14
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
22
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
88
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 22 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 22 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 19)
-
350
ns
Q
rr
Reverse recovery charge
-
4.7
μC
I
RRM
Reverse recovery current
-
27
A
t
rr
Reverse recovery time
I
SD
= 22 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 19)
-
451
ns
Q
rr
Reverse recovery charge
-
6.5
μC
I
RRM
Reverse recovery current
-
29
A



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