This is information on a product in full production.

January 2014

DocID025255 Rev 2

1/14

STF28N60M2,

STFI28N60M2

N-channel 600 V, 0.135

Ω typ., 22 A MDmesh II Plus™ low Qg

Power MOSFETs in TO-220FP, I

2

PAKFP packages

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LCC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

TO-220FP

1

2

3

I PAKFP (TO-281)

2

1

2

3

AM15572v1

Order codes

STF28N60M2

650 V

0.150

Ω

22 A

STFI28N60M2

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF28N60M2

28N60M2

TO-220FP

Tube

STFI28N60M2

I

2

PAKFP (TO-281)

www.st.com