STL3NK40 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STL3NK40

功能描述	N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STL3NK40

4/16

DocID16246 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

400

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 400 V

VDS = 400 V, TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

0.8

1.6

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 0.22 A

4.5

5.5

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 0.43 A

1.2

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

128

200

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-4

Gate input resistance

f= 1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-12

Total gate charge

VDD = 320 V, ID = 1.4 A,

VGS = 10 V

(see Figure 10)

8.7

Qgs

Gate-source charge

0.9

Qgd

Gate-drain charge

3.8

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