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STL3NK40 数据表(PDF) 5 Page - STMicroelectronics

部件名 STL3NK40
功能描述  N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL3NK40 数据表(HTML) 5 Page - STMicroelectronics

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STL3NK40
Electrical characteristics
16
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 200 V, ID = 0.7 A,
RG =4.7 Ω, VGS = 10 V
(see Figure 14)
-3
-
ns
tr
Rise time
-
4
-
ns
td(off)
Turn-off-delay time
-
18
-
ns
tf
Fall time
-
16
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
0.43
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
1.72
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 0.43 A, VGS = 0
-
1.2
V
trr
Reverse recovery time
ISD = 1.4 A, di/dt = 100 A/µs
VDD = 20 V
(see Figure 19)
-
166
ns
Qrr
Reverse recovery charge
-
300
nC
IRRM
Reverse recovery current
-
3.6
A
trr
Reverse recovery time
ISD = 1.4 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150 °C
(see Figure 19)
-
176
ns
Qrr
Reverse recovery charge
-
340
nC
IRRM
Reverse recovery current
-
3.8
A



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