STB18NF30 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STB18NF30

功能描述	Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB18NF30

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

330

VGS

Gate-source voltage

±20

(1)

The value is rated according to Rthj-c.

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse is rated according to SOA.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

150

dv/dt(3)

ISD ≤ 18 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 175

°C

Operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-pcb

Table 4. Avalanche data

Symbol

Parameter

Value

Unit

IAV

Non-repetitive avalanche current

EAS

Single pulse avalanche energy (starting

TJ=25 °C, ID=IAV, VDD=50 V)

200

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