STB18NF30 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STB18NF30

功能描述	Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Electrical characteristics

STB18NF30

4/15

DocID018590 Rev 3

Electrical characteristics

(TCASE=25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID=1 mA, VGS=0

330

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS=330 V

VDS=330 V,Tc=125 °C

-1

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS=±20 V

100

VGS(th)

Gate threshold voltage

VDS=VGS, ID= 250 µA

RDS(on)

Static drain-source

on-resistance

VGS=10 V, ID=9 A

160

180

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS=25 V, f=1 MHz,

VGS=0 V

1650

Coss

Output capacitance

220

Crss

Reverse transfer

capacitance

-30

Total gate charge

VDD=264 V, ID=18 A,

VGS=10 V

(see Figure 14)

-44

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=165 V, ID= 9 A,

RG= 4.70 Ω, VGS=10 V

(see Figure 13)

-20

Rise time

td(off)

Turn-off delay time

145

Fall time

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