Preliminary MS23P21

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS23P21]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

-4.1

A

Pulsed Drain Current

b

-10

A

Continuous Source Current (Diode Conduction)

a

0.46

A

Operating Junction and Storage Temperature

-55 to +150

°C

Pd

Power Dissipation@ TC=25°C

1.25

W

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal Characteristics (Tc=25°C unless otherwise specified)

Parameter

Symbol

Value

Units

Maximum Junction-to-Case

150

°C/W

Maximum Junction-to-Ambient

100

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Gate-Threshold Voltage

-0.4

-1.5

V

Gate-Body Leakage

±100

nA

Zero Gate Voltage Drain Current

-1

-10

uA

On-State Drain Current

A

-5

A

r

DS(on)

Drain-Source On-Resistance

A

79

110

m

Ω

gfs

Forward Tranconductance

A

9

S

Diode Forward Voltage

-0.65

V

Pulsed Body-Diode Current

C

-10

A