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MS23P21 数据表(PDF) 3 Page - Bruckewell Technology LTD |
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MS23P21 数据表(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 4 page ![]() Preliminary MS23P21 P-Channel 20-V (D-S) MOSFET Publication Order Number: [MS23P21] © Bruckewell Technology Corporation Rev. A -2014 Dynamic b Symbol Parameter Test Conditions Min Typ. Max. Units Qg Total Gate Charge VDS = -10 V , ID=-4.1 A, VGS = -4.5 V -- 7.2 -- nC Qgs Gate-Source Charge -- 1.7 -- nC Qgd Gate-Drain Charge -- 1.5 -- nC td(on) Turn-On Delay Time VDD = -10 V , IL = -1 A, VGEN = -4.5 V , RG = 6 Ω -- 10 -- ns tr Rise Time -- 9 -- ns td(off) Turn-Off Delay Time -- 27 -- ns tf Fall Time -- 11 -- ns CISS Input Capacitance P-Channel VDS = -15 V ID = -3.7 A,VGS = 0 V -- 500 -- nC COSS Output Capacitance -- 90 -- nC CRSS Reverse Transfer Capacitance -- 60 -- nC Notes: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. c. Repetitive rating, pulse width limited by junction temperature. |
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