6.04

7

IDT7134SA/LA

HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS OVER THE

7134X45

7134X55

7134X70

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

WRITE CYCLE

Write Cycle Time

45

—

55

—

70

—

ns

Chip Enable to End-of-Write

40

—

50

—

60

—

ns

Address Valid to End-of-Write

40

—

50

—

60

—

ns

Address Set-up Time

0

—

0

—

0

—

ns

Write Pulse Width

40

—

50

—

60

—

ns

Write RecoveryTime

0

—

0

—

0

—

ns

Data Valid to End-of-Write

20

—

25

—

30

—

ns

Output High-Z Time

(1, 2)

—20

—

25

—

30

ns

Data Hold Time

(3)

3—

3

—

3—

ns

Write Enabled to Output in High-Z

(1, 2)

—20

—

25

—

30

ns

Output Active from End-of-Write

(1, 2, 3)

3—

3

—

3—

ns

Write Pulse to Data Delay

(4)

—70

—

80

—

90

ns

Write Data Valid to Read Data Delay

(4)

—45

—

55

—

70

ns

NOTES:

1. Transition is measured

±500mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

4. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write with Port-to-Port Read”.

5. (Commercial only), 0

°C to +70°C temperature range .

6. “X” in part number indicates power rating (SA or LA).

2720 tbl 10

2.

3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".

NOTES:

1. Write cycle parameters should be adhered to, in order to ensure proper writing.

2720 drw 10

R/

VALID

MATCH

VALID

MATCH