2SB1169-R datasheet(1/2 Pages) KEXIN

部件名	2SB1169-R

功能描述	PNP Transistors

PDF	2 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB1169

■

Features

●

High forward current transfer ratio hFE which

has satisfactory linearity

●

Low collector-emitter saturation voltage VCE(sat)

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-60

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector current -Pulse

ICP

-2

Collector Power Dissipation

15

Ta = 25℃

1.3

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -30 mA, IB=0

-60

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -60V , IE=0

-0.1

mA

Collector-emitter cut-off current

ICES

VCE = −60 V, IB = 0

-200

Collector-emitter cut-off current

ICEO

VCE = −30 V, IB = 0

-300

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

mA

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-125mA

-1

Base - emitter saturation voltage

VBE(sat) IC=-1 A, IB=-125mA

-1.2

Base - emitter voltage

VBE

VCE= -4V, IC= -1 A

-1.3

VCE= -4V, IC= -200 mA

40

450

VCE= -4V, IC= -1 A

15

Turn-ON Time

ton

0.5

Storage Time

tstg

1.2

Fall Time

tf

0.3

Transition frequency

fT

VCE= -10V, IC= -500mA,f=10MHz

40

MHz

IC = −1 A, IB1 = −50 mA, IB2 = 50 mA

VCC = −50 V

us

V

uA

V

DC current gain

hFE

■

Classification of hfe(1)

Type

2SB1169-R

2SB1169-Q

2SB1169-P

2SB1169-O

Range

40-90

70-150

120-250

200-450

类似零件编号 - 2SB1169-R

制造商	部件名	数据表	功能描述
Panasonic Semiconductor	2SB1169	75Kb / 3P	For power amplification
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	2SB1169A-O	1Mb / 2P	PNP Transistors
	2SB1169A-P	1Mb / 2P	PNP Transistors

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类似说明 - 2SB1169-R

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