2SB1169-R datasheet(2/2 Pages) KEXIN

2 / 2 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

2SB1169

■

Typical Characterisitics

VCE(sat) IC

hFE

VCE

VBE

120

Ambient temperature Ta (°C)

(1)TC=Ta

(2)Without heat sink

(PC=1.3W)

(1)

(2)

− 0.5

−1.0

−1.5

−2.5

−2.0

−6

−1

−5

−2

−4

−3

Collector-emitter voltage VCE (V)

T C

=25˚C

IB =–40mA

–30mA

–25mA

–20mA

–10mA

–8mA

–6mA

–4mA

–2mA

−2.0

−1.6

−1.2

− 0.8

− 0.4

−2

−4

−6

−10

−8

Base-emitter voltage V BE (V)

T C

=100˚C

25˚C

V CE =–4V

–25˚C

− 0.01

− 0.1

−1

−10

−100

− 0.1

−1

−10

IC/IB=10

25˚C

T C

=100˚C

–25˚C

Collector current IC(A)

− 0.01

− 0.1

−1

−10

Collector current IC (A)

102

104

103

V CE =–4V

T C

=100˚C

25˚C

–25˚C

− 0.01

− 0.1

−1

−10

Collector current IC (A)

102

104

103

VCE=–5V

f=10MHz

TC=25˚C

− 0.01

−1

− 0.1

−1

−10

−100

−10

−100

−1000

Non repetitive pulse

TC=25˚C

t=10ms

t=300ms

t=1ms

ICP

Collector-emitter voltage V

CE (V)

(1)

(2)

(1)Without heat sink

(2)With a 50×50×2mm Al heat sink

10−1

103

102

Time t (s)

10−3

104

103

102

10−1

10−2

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