2SA1514K-R datasheet(1/4 Pages) KEXIN

部件名	2SA1514K-R

功能描述	PNP Transistors

PDF	4 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SA1514K

■

Features

●

High Breakdown Voltage

●

Lead Free/RoHS Compliant.

●

Complementary to 2SC3906K

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-120

Collector - Emitter Voltage

VCEO

-120

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-50

Collector Current - Pulse (Note.1)

ICP

-100

Collector Power Dissipation

PC

200

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

mA

Note.1: PW=100ms,Single Pulse

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -50 μA， IE=0

-120

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB= 0

-120

Emitter - base breakdown voltage

VEBO

IE= -50μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -100 V , IE=0

-0.5

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.5

Collector-emitter saturation voltage

VCE(sat) IC=-10 mA, IB=-1 mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-10 mA, IB=-1 mA

-1.2

DC current gain

hFE

VCE= -6V, IC= -2mA

180

560

Collector output capacitance

Cob

VCB= -12V, IE= 0,f=1MHz

3.2

pF

Transition frequency

fT

VCE= -12V, IE= 2mA,f=100MHz

140

MHz

V

uA

V

■

Classification of hfe

Type

2SA1514K-R

2SA1514K-S

Range

180-390

270-560

Marking

RR

RS

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

1. Base

2. Emitter

3. Collector

0.15 +0.02

-0.02

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