FSL130R datasheet(1/8 Pages) INTERSIL

部件名	FSL130R

功能描述	8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

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1 / 8 page

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright

June 1998

FSL130D, FSL130R

8A, 100V, 0.230 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

Features

• 8A, 100V, rDS(ON) = 0.230Ω

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm2 with

VDS up to 80% of Rated Breakdown and

VGS of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS

- Typically Survives 2E12 if Current Limited to IDM

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm2

- Usable to 3E14 Neutrons/cm2

Formerly available as type TA17636.

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent

of

MIL-S-19500,

or

Space

equivalent

of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

Package

TO-205AF

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Commercial

FSL130D1

10K

TXV

FSL130D3

100K

Commercial

FSL130R1

100K

TXV

FSL130R3

100K

Space

FSL130R4

D

G

S

G

D

File Number

4031.3

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